A Comparison between BTA and Amidoximes and their Interactions with Copper Surfaces

Siddharth Janak Jethwa; Daniel Walton Tee; Stephen Malcolm Francis; Federico Grillo; Neville V Richardson; Chris Reid; Larry McGhee; W.M. Lee

A Comparison between BTA and Amidoximes and their Interactions with Copper Surfaces

Siddharth Janak Jethwa, Daniel Walton Tee, Stephen Malcolm Francis, Federico Grillo, Neville V Richardson, Chris Reid, Larry McGhee, W.M. Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The use of integration of copper interconnects in semiconductor devices has greatly advanced the development of integrated circuits and has enabled ever higher device densities. Unfortunately the oxides of copper are poorly suited to semiconductor manufacture. As Cu (I) and Cu (II) oxides are not self-limiting they can pose serious issues from a cleaning and queue time management perspective. In both post-etch and post-CMP cleaning applications it is critical that both types of Cu oxide are removed without damage to either Cu or the dielectric. With the most advanced sub 32nm nodes simply removing the oxides is not sufficient; their re-growth must also be prevented using surface passivation.

Original language	English
Title of host publication	Solid State Phenomena
Publisher	Trans Tech Publications
Pages	231-234
Volume	187
Publication status	Published - Apr 2012

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title = "A Comparison between BTA and Amidoximes and their Interactions with Copper Surfaces",

abstract = "The use of integration of copper interconnects in semiconductor devices has greatly advanced the development of integrated circuits and has enabled ever higher device densities. Unfortunately the oxides of copper are poorly suited to semiconductor manufacture. As Cu (I) and Cu (II) oxides are not self-limiting they can pose serious issues from a cleaning and queue time management perspective. In both post-etch and post-CMP cleaning applications it is critical that both types of Cu oxide are removed without damage to either Cu or the dielectric. With the most advanced sub 32nm nodes simply removing the oxides is not sufficient; their re-growth must also be prevented using surface passivation.",

author = "Jethwa, \{Siddharth Janak\} and Tee, \{Daniel Walton\} and Francis, \{Stephen Malcolm\} and Federico Grillo and Richardson, \{Neville V\} and Chris Reid and Larry McGhee and W.M. Lee",

year = "2012",

month = apr,

language = "English",

volume = "187",

pages = "231--234",

booktitle = "Solid State Phenomena",

publisher = "Trans Tech Publications",

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T1 - A Comparison between BTA and Amidoximes and their Interactions with Copper Surfaces

AU - Jethwa, Siddharth Janak

AU - Tee, Daniel Walton

AU - Francis, Stephen Malcolm

AU - Grillo, Federico

AU - Richardson, Neville V

AU - Reid, Chris

AU - McGhee, Larry

AU - Lee, W.M.

PY - 2012/4

Y1 - 2012/4

N2 - The use of integration of copper interconnects in semiconductor devices has greatly advanced the development of integrated circuits and has enabled ever higher device densities. Unfortunately the oxides of copper are poorly suited to semiconductor manufacture. As Cu (I) and Cu (II) oxides are not self-limiting they can pose serious issues from a cleaning and queue time management perspective. In both post-etch and post-CMP cleaning applications it is critical that both types of Cu oxide are removed without damage to either Cu or the dielectric. With the most advanced sub 32nm nodes simply removing the oxides is not sufficient; their re-growth must also be prevented using surface passivation.

AB - The use of integration of copper interconnects in semiconductor devices has greatly advanced the development of integrated circuits and has enabled ever higher device densities. Unfortunately the oxides of copper are poorly suited to semiconductor manufacture. As Cu (I) and Cu (II) oxides are not self-limiting they can pose serious issues from a cleaning and queue time management perspective. In both post-etch and post-CMP cleaning applications it is critical that both types of Cu oxide are removed without damage to either Cu or the dielectric. With the most advanced sub 32nm nodes simply removing the oxides is not sufficient; their re-growth must also be prevented using surface passivation.

UR - https://www.scopus.com/pages/publications/84860161958

M3 - Conference contribution

VL - 187

SP - 231

EP - 234

BT - Solid State Phenomena

PB - Trans Tech Publications

ER -

A Comparison between BTA and Amidoximes and their Interactions with Copper Surfaces

Abstract

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