1240nm high-power GaInNAs laser diodes

D. Bisping; S. Schneider; Sven Höfling; S. Habermann; M. Fischer; J. Koeth; A. Forchel

1240nm high-power GaInNAs laser diodes

D. Bisping^*, S. Schneider, Sven Höfling, S. Habermann, M. Fischer, J. Koeth, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We have fabricated 1240nm GaInNAs high-power semiconductor laser diodes. In pulsed operation 1000 mu m x 100 mu m laser diodes show record low threshold current densities of 174 Acm(-2). Continuous wave output powers exceeding 4.6Watts at room temperature and 6.2Watts at a heatsink temperature of -5 degrees C are obtained from 1300 mu m x 200 mu m devices. The maximum wallplug efficiency of the device exceeds 40% and the internal quantum efficiency reaches 0.89. Preliminary lifetime tests were performed for about 1000 h and show stable high-power operation. c 2007 Optical Society of America.

Original language	English
Pages (from-to)	15187-15192
Number of pages	6
Journal	Optics Express
Volume	15
Issue number	23
Publication status	Published - 12 Nov 2007

Keywords

QUANTUM-WELL LASERS
1.3 MU-M
MOLECULAR-BEAM EPITAXY
WAVELENGTH
RANGE

Cite this

@article{8f329d753da444a39bbf88fadeefa78d,

title = "1240nm high-power GaInNAs laser diodes",

abstract = "We have fabricated 1240nm GaInNAs high-power semiconductor laser diodes. In pulsed operation 1000 mu m x 100 mu m laser diodes show record low threshold current densities of 174 Acm(-2). Continuous wave output powers exceeding 4.6Watts at room temperature and 6.2Watts at a heatsink temperature of -5 degrees C are obtained from 1300 mu m x 200 mu m devices. The maximum wallplug efficiency of the device exceeds 40% and the internal quantum efficiency reaches 0.89. Preliminary lifetime tests were performed for about 1000 h and show stable high-power operation. c 2007 Optical Society of America.",

keywords = "QUANTUM-WELL LASERS, 1.3 MU-M, MOLECULAR-BEAM EPITAXY, WAVELENGTH, RANGE",

author = "D. Bisping and S. Schneider and Sven H{\"o}fling and S. Habermann and M. Fischer and J. Koeth and A. Forchel",

year = "2007",

month = nov,

day = "12",

language = "English",

volume = "15",

pages = "15187--15192",

journal = "Optics Express",

issn = "1094-4087",

publisher = "OPTICAL SOC AMER",

number = "23",

}

TY - JOUR

T1 - 1240nm high-power GaInNAs laser diodes

AU - Bisping, D.

AU - Schneider, S.

AU - Höfling, Sven

AU - Habermann, S.

AU - Fischer, M.

AU - Koeth, J.

AU - Forchel, A.

PY - 2007/11/12

Y1 - 2007/11/12

N2 - We have fabricated 1240nm GaInNAs high-power semiconductor laser diodes. In pulsed operation 1000 mu m x 100 mu m laser diodes show record low threshold current densities of 174 Acm(-2). Continuous wave output powers exceeding 4.6Watts at room temperature and 6.2Watts at a heatsink temperature of -5 degrees C are obtained from 1300 mu m x 200 mu m devices. The maximum wallplug efficiency of the device exceeds 40% and the internal quantum efficiency reaches 0.89. Preliminary lifetime tests were performed for about 1000 h and show stable high-power operation. c 2007 Optical Society of America.

AB - We have fabricated 1240nm GaInNAs high-power semiconductor laser diodes. In pulsed operation 1000 mu m x 100 mu m laser diodes show record low threshold current densities of 174 Acm(-2). Continuous wave output powers exceeding 4.6Watts at room temperature and 6.2Watts at a heatsink temperature of -5 degrees C are obtained from 1300 mu m x 200 mu m devices. The maximum wallplug efficiency of the device exceeds 40% and the internal quantum efficiency reaches 0.89. Preliminary lifetime tests were performed for about 1000 h and show stable high-power operation. c 2007 Optical Society of America.

KW - QUANTUM-WELL LASERS

KW - 1.3 MU-M

KW - MOLECULAR-BEAM EPITAXY

KW - WAVELENGTH

KW - RANGE

M3 - Article

SN - 1094-4087

VL - 15

SP - 15187

EP - 15192

JO - Optics Express

JF - Optics Express

IS - 23

ER -

1240nm high-power GaInNAs laser diodes

Abstract

Keywords

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