1240nm high-power GaInNAs laser diodes

D. Bisping*, S. Schneider, Sven Höfling, S. Habermann, M. Fischer, J. Koeth, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We have fabricated 1240nm GaInNAs high-power semiconductor laser diodes. In pulsed operation 1000 mu m x 100 mu m laser diodes show record low threshold current densities of 174 Acm(-2). Continuous wave output powers exceeding 4.6Watts at room temperature and 6.2Watts at a heatsink temperature of -5 degrees C are obtained from 1300 mu m x 200 mu m devices. The maximum wallplug efficiency of the device exceeds 40% and the internal quantum efficiency reaches 0.89. Preliminary lifetime tests were performed for about 1000 h and show stable high-power operation. c 2007 Optical Society of America.

Original languageEnglish
Pages (from-to)15187-15192
Number of pages6
JournalOptics Express
Volume15
Issue number23
Publication statusPublished - 12 Nov 2007

Keywords

  • QUANTUM-WELL LASERS
  • 1.3 MU-M
  • MOLECULAR-BEAM EPITAXY
  • WAVELENGTH
  • RANGE

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