Transient Hot Electron Dynamics in Single-Layer TaS2 (dataset)

  • Federico Andreatta (Creator)
  • Habib Rostami (Creator)
  • Antonija Grubiˇsi´c ˇCabo, (Creator)
  • Marco Bianchi (Creator)
  • Charlotte E. Sanders (Creator)
  • Deepnarayan Biswas (Creator)
  • Cephise Cacho (Creator)
  • Alfred J J. H. Jones (Creator)
  • Richard Chapman (Creator)
  • Emma Springate (Creator)
  • Phil King (Creator)
  • Jill Miwa (Creator)
  • Alexander Balatsky (Creator)
  • Søren Ulstrup (Creator)
  • Philip Hofmann (Creator)



Using time- and angle-resolved photoemission spectroscopy, we study the response of metallic single layer TaS2 in the 1H structural modification to the generation of excited carriers by a femtosecond laser pulse. A complex interplay of band structure modifications and electronic temperature increase is observed and analyzed by direct fits of model spectral functions to the two-dimensional (energy and k-dependent) photoemission data. Upon excitation, the partially occupied valence band is found to shift to higher binding energies by up to ⇡ 100 meV, accompanied by electronic temperatures exceeding 3000 K. These observations are explained by a combination of temperature-induced shifts of the chemical potential, as well as temperature-induced changes in static screening. Both contributions are evaluated in a semi-empirical tight-binding model. The shift resulting from a change in the chemical potential is found to be dominant.
Date made available22 Apr 2019
PublisherUniversity of St Andrews

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